High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs
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چکیده
منابع مشابه
Small Signal Response of Inversion Layers in High Mobility In0.53Ga0.47As MOSFETs Made with Thin High- Dielectrics
Ultra-high mobility compound semiconductor-based MOSFETs and quantum-well FETs could enable the next generation of logic transistors operating at low supply voltages since these materials exhibit excellent electron transport properties. While the long channel In0.53Ga0.47As MOSFET characteristics exhibit promising characteristics with unpinned Fermi level at the InGaAs-dielectric interface, the...
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